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insulated gate bipolar transistor with ultrafast soft recovery diode features 6/24/02 ? low vce (on) non punch through igbt technology. low diode vf. 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive vce (on) temperature coefficient. benefits www.irf.com 1 benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 22 i c @ t c = 100c continuous collector current 12 i cm pulsed collector current 44 i lm clamped inductive load current 44 a i f @ t c = 25c diode continuous forward current 22 i f @ t c = 100c diode continuous forward current 10 i fm diode maximum forward current 44 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 156 p d @ t c = 100c maximum power dissipation 62 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.8 r jc junction-to-case - diode ??? ??? 3.4 r cs case-to-sink, flat, greased surface ??? 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g IRGB10B60KD irgs10b60kd irgsl10b60kd e g n-channel c v ces = 600v i c = 12a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.8v d 2 pak irgs10b60kd to-220ab IRGB10B60KD to-262 irgsl10b60kd

irg/b/s/sl10b60kd 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.3 ??? v/c v ge = 0v, i c = 1.0ma, (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.5 1.80 2.20 i c = 10a, v ge = 15v ??? 2.20 2.50 v i c = 10a, v ge = 15v t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-150c) g fe forward transconductance ??? 7.0 ??? s v ce = 50v, i c = 10a, pw=80s i ces zero gate voltage collector current ??? 3.0 150 a v ge = 0v, v ce = 600v ??? 300 700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.30 1.45 i c = 10a ??? 1.30 1.45 v i c = 10a t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) ref.fig. 5, 6,7 9,10,11 9,10,11 12 8 parameter min. typ. max. units conditions qg total gate charge (turn-on) ??? 38 ??? i c = 10a qge gate - emitter charge (turn-on) ??? 4.3 ??? nc v cc = 400v qgc gate - collector charge (turn-on) ??? 16.3 ??? v ge = 15v e on turn-on switching loss ??? 140 247 j i c = 10a, v cc = 400v e off turn-off switching loss ??? 250 360 v ge = 15v,r g = 47 ?, l = 200h e tot total switching loss ??? 390 607 ls = 150nh t j = 25c t d(on) turn-on delay time ??? 30 39 i c = 10a, v cc = 400v t r rise time ??? 20 29 v ge = 15v, r g = 47 ?, l = 200h t d(off) turn-off delay time ??? 230 262 ns ls = 150nh, t j = 25c t f fall time ??? 23 32 e on turn-on switching loss ??? 230 340 i c = 10a, v cc = 400v e off turn-off switching loss ??? 350 464 j v ge = 15v,r g = 47 ?, l = 200h e tot total switching loss ??? 580 804 ls = 150nh t j = 150c t d(on) turn-on delay time ??? 30 39 i c = 10a, v cc = 400v t r rise time ??? 20 28 v ge = 15v, r g = 47 ?, l = 200h t d(off) turn-off delay time ??? 250 274 ns ls = 150nh, t j = 150c t f fall time ??? 26 34 c ies input capacitance ??? 620 ??? v ge = 0v c oes output capacitance ??? 62 ??? pf v cc = 30v c res reverse transfer capacitance ??? 22 ??? f = 1.0mhz t j = 150c, i c = 44a, vp =600v v cc = 500v, v ge = +15v to 0v, s t j = 150c, vp =600v,r g = 47 ? v cc = 360v, v ge = +15v to 0v erec reverse recovery energy of the diode ??? 245 330 j t j = 150c t rr diode reverse recovery time ??? 90 105 ns v cc = 400v, i f = 10a, l = 200h i rr diode peak reverse recovery current ??? 19 22 a v ge = 15v,r g = 47 ?, ls = 150nh switching characteristics @ t j = 25c (unless otherwise specified) rbsoa reverse bias sa fe operting area full square scsoa short circuit safe operting area 10 ??? ??? ref.fig. ct1 ct4 ct4 13,15 wf1wf2 4 ct2 ct3 wf4 17,18,19 20, 21 ct4,wf3 ct4 r g = 47 ? 14, 16 ct4 wf1 wf2 note to are on page 15
irg/b/s/sl10b60kd www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c (c) 0 20 40 60 80 100 120 140 160 180 p t o t ( w ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 20 s 0 20 40 60 80 100 120 140 160 t c (c) 0 5 10 15 20 25 i c ( a )
irg/b/s/sl10b60kd 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 5 10 15 20 25 30 35 40 i f ( a ) -40c 25c 150c 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
irg/b/s/sl10b60kd www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 5 101520 v ge (v ) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a 0 5 10 15 20 v ge (v ) 0 10 20 30 40 50 60 70 80 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a
irg/b/s/sl10b60kd 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=200h; v ce = 400v r g = 47 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=200h; v ce = 400v r g = 47 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=200h; v ce = 400v i ce = 10a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l=200h; v ce = 400v i ce = 10a; v ge = 15v 0 50 100 150 r g ( ? ) 0 50 100 150 200 250 300 350 400 450 500 e n e r g y ( j ) e on e off 0 5 10 15 20 25 i c (a) 0 100 200 300 400 500 600 700 800 e n e r g y ( j ) e off e on 0 5 10 15 20 25 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
irg/b/s/sl10b60kd www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 10a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 10a; t j = 150c 0 50 100 150 r g ( ?) 0 5 10 15 20 25 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 5 10 15 20 25 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 400 500 600 700 800 900 1000 1100 1200 q r r ( c ) 22 ? 47 ? 100 ? 10 ? 20a 10a 5.0a 0 5 10 15 20 25 i f (a) 0 5 10 15 20 25 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ?
irg/b/s/sl10b60kd 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 23 - typical gate charge vs. v ge i ce = 10a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 5 10 15 20 25 i f (a ) 0 50 100 150 200 250 300 350 400 450 e n e r g y ( j ) 22 ? 10 ? 47 ? 100 ? 0 10203040 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 1 10 100 v ce (v) 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
irg/b/s/sl10b60kd www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.285 0.000134 0.241 0.000565 0.288 0.0083 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri ri (c/w) i (sec) 0.846 0.000149 1.830 0.001575 1.143 0.027005 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
irg/b/s/sl10b60kd 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
irg/b/s/sl10b60kd www.irf.com 11 -100 0 100 200 300 400 500 600 -0.20 0.00 0.20 0.40 0.60 0.80 time(s) v ce (v) -2 0 2 4 6 8 10 12 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 15.90 16.00 16.10 16.20 time (s) v ce (v) -5 0 5 10 15 20 25 30 i ce (a) test current 90% test current 5% v ce 10% test current t r eon loss -600 -500 -400 -300 -200 -100 0 100 -0.15 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 i f (a) pe ak i rr t rr q rr 10% peak irr 0 50 100 150 200 250 300 350 400 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 50 100 i ce (a) v ce i ce fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t j = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4
irg/b/s/sl10b60kd 12 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs.

dimensions are shown in millimeters (inches) e x a m p l e : t h i s i s a n i r f 1 0 1 0 l o t c o d e 1 7 8 9 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " i n t e r n a t i o n a l r e c t i f i e r l o g o a s s e m b l y l o t c o d e p a r t n u m b e r d a t e c o d e y e a r 7 = 1 9 9 7 w e e k 1 9 l i n e c

irg/b/s/sl10b60kd www.irf.com 13

f 5 3 0 s t h i s i s a n i r f 5 3 0 s w i t h l o t c o d e 8 0 2 4 a s s e m b l e d o n w w 0 2 , 2 0 0 0 i n t h e a s s e m b l y l i n e " l " a s s e m b l y l o t c o d e i n t e r n a t i o n a l r e c t i f i e r l o g o p a r t n u m b e r d a t e c o d e y e a r 0 = 2 0 0 0 w e e k 0 2 l i n e l
irg/b/s/sl10b60kd 14 www.irf.com to-262 part marking information to-262 package outline e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " l o g o r e c t i f i e r i n t e r n a t i o n a l igbt 1- gate 2- collector 3- emitter 4- collector
irg/b/s/sl10b60kd www.irf.com 15

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/02 data and specifications subject to change without notice. this product has been desi gned and qualifi ed fo r industrial market. qualification standards can be found on ir?s web site. notes: this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery. to-220 package is not recommended for surface mount application

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